CBTU4411EE

CBTU4411EE, 11-bit 1-of-4 fet multiplexer/demultiplexer, BGA, -0.5 V to 2.5 V, ±50 mA, Philips Electronics India Limited

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Price:: US $2.50~3.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 300 :	3.00 / Piece
301 ~ 600 :	2.80 / Piece
601 ~ 1000 :	2.50 / Piece

PartNumber:: CBTU4411EE

Brand:: Philips Electronics India Limited - PHILIPS | Pack: BGA | D/C: 11+

Availability:: Supply Ability: 1000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-05-21

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Part Number:CBTU4411EE
US $2.50 - 3.00
Quantity:

piece

Product Summary

The CBTU4411EE is a high-bandwidth, SSTL_18 compatible FET multiplexer/demultiplexer with low ON-state resistance (ron). The device utilizes an internal charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ron. The low and flat ron allows for minimal propagation delay and supports rail-to-rail signaling on data input/output (I/O) ports. The CBTU4411EE also features very low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.

Parametrics

CBTU4411EE absolute maximum ratings: (1)Supply voltage range, VDD: -0.5 V to 2.5 V; (2)Control input voltage range, VIN: -0.5 V to 2.5 V; (3)Switch I/O voltage range, VI/O: -0.5 V to 2.5 V; (4)Control input clamp current, IIK (VIN < 0 or VIN > 0): ±50 mA; (5)I/O port clamp current, II/OK (VI/O < 0 or VI/O > 0): ±50 mA; (6)ON-state switch current, II/O: ±100 mA; (7)Continuous current through VDD or GND terminals: ±100 mA; (8)Package thermal impedance, θJA: TBD℃/W; (9)Storage temperature range, Tstg: -65℃ to 150℃.

Features

CBTU4411EE features: (1)Supports SSTL_18 Signaling Levels; (2)Suitable for DDR-II Applications; (3)D.Port Outputs Are Precharged by Bias Voltage (VBIAS); (4)Internal Termination for Control Inputs; (5)High Bandwidth (334 MHz Min); (6)Low and Flat ON-State Resistance (ron) Characteristics, (ron = 17Ω Max); (7)Internal 400- Pulldown Resistors; (8)Low Differential and Rising/Falling Edge Skew; (9)Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II; (10)ESD Performance Tested Per JESD 22-2000-V Human-Body Model; (11)(A114-B, Class II); 1000-V Charged-Device Model (C101).