(China (Mainland))
Product Summary
The EDD51163DBH-5BLS-F is a 512M bits DDR Mobile RAM.
Parametrics
EDD51163DBH-5BLS-F absolute maximum ratings: (1)Voltage on any pin relative to VSS, VT: -0.5 to +2.3 V; (2)Supply voltage relative to VSS, VDD: -0.5 to +2.3 V; (3)Short circuit output current, IOS: 50 mA; (4)Power dissipation, PD: 1.0 W; (5)Operating ambient temperature, TA: -25 to +85℃; (6)Storage temperature, Tstg: -55 to +125℃.
Features
EDD51163DBH-5BLS-F features: (1)DLL is not implemented; (2)Low power consumption; (3)Partial Array Self-Refresh (PASR); (4)Auto Temperature Compensated Self-Refresh (ATCSR) by built-in temperature sensor; (5)Deep power-down mode; (6)Double-data-rate architecture; two data transfers per one clock cycle; (7)The high-speed data transfer is realized by the 2 bits prefetch pipelined architecture; (8)Bi-directional data strobe (DQS) is transmitted/received with data for capturing data at the receiver.; (9)Data inputs, outputs, and DM are synchronized with DQS; (10)DQS is edge-aligned with data for READs; centeraligned with data for WRITEs; (11)Differential clock inputs (CK and /CK); (12)Commands entered on each positive CK edge: data and data mask referenced to both edges of DQS; (13)Data mask (DM) for write data; (14)Burst termination by burst stop command and precharge command; (15)Wide temperature range, TA = -25 to +85℃.
Diagrams
