Product Summary

The FQP17P06 is a P-Channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. The FQP17P06 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Parametrics

FQP17P06 absolute maximum ratings: (1)VDSS, Drain-Source Voltage: -60 V; (2)ID, Drain Current - Continuous (TC = 25℃): -17 A; Continuous (TC = 100℃): -12 A; (3)IDM, Drain Current - Pulsed: -68 A; (4)VGSS, Gate-Source Voltage: ± 25 V; (5)EAS, Single Pulsed Avalanche Energy (Note 2): 300 mJ; (6)IAR, Avalanche Current (Note 1): -17 A; (7)EAR, Repetitive Avalanche Energy (Note 1): 7.9 mJ; (8)dv/dt, Peak Diode Recovery dv/dt (Note 3): -7.0 V/ns; (9)PD, Power Dissipation (TC = 25℃): 79 W; Derate above 25℃: 0.53 W/℃; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +175℃; (11)TL, Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300℃.

Features

FQP17P06 features: (1)-17A, -60V, RDS(on) = 0.12?@VGS = -10 V; (2)Low gate charge ( typical 21 nC); (3)Low Crss ( typical 80 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)175℃ maximum junction temperature rating.

Diagrams

FQP17P06 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FQP17P06
FQP17P06

Fairchild Semiconductor

MOSFET 60V P-Channel QFET

Data Sheet

0-1: $0.51
1-25: $0.44
25-100: $0.41
100-250: $0.35
FQP17P06_Q
FQP17P06_Q

Fairchild Semiconductor

MOSFET

Data Sheet

Negotiable