(China (Mainland))
Product Summary
The H27U4G8F2DTR-BC is a 4 Gbit NAND Flash with spare 16Mx8 bit capacity. The H27U4G8F2DTR-BC is offered in 3.0/1.8 Vcc power supply, and with x8 and x16 I/O interface. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so the H27U4G8F2DTR-BC is possible to preserve valid data while old data is erased. The device contains 4096 blocks, composed by 64 pages. Memory array is split into 2 planes, each of them consisting of 2048 blocks. Like all other 2KB - page NAND Flash device, a program operation allows to write the 2112-byte page in typical 200us(3.3V) and an erase operation can be performed in typical 3.5ms on a 128K-byte block.
Parametrics
H27U4G8F2DTR-BC absolute maximum ratings: (1)TA. Ambient operating temperature (temperature range option 1): 0 to 70 °C; Ambient operating temperature (temperature range option 6): -40 to 85 °C; (2)TBIAS. Temperature under bias: -50 to 125 °C; (3)TSTG. Storage temperature: -60 to 150 °C; (4)VIO (2). Input or output voltage: -0.6 to 4.6 V; (5)VCC. Supply voltage: -0.6 to 4.6 V.
Features
H27U4G8F2DTR-BC features: (1)Density: 4Gbit: 4096blocks; (2)Nand flash interface: NAND interface; Address / data multiplexing; (3)Supply voltage: Vcc = 3.0/1.8V Volt core supply voltage for program, erase and read operations; (4)Memory cell array: X8: (2K + 64)bytes x 64 pages x 4096 blocks; X16: (1k+32)words x 64 pages x 2048 blocks; (5)Page size: X8: (2048 + 64 spare)bytes; X16:(1024 + 32spare)words; (6)Block size: X8: (128K + 4K spare)bytes; X16:(64K + 2K spare)words; (7)Page read / program: Random access: 25us (Max); Sequentiall access: 25ns / 45ns (3.0V/1.8V, min.); Program time(3.0V/1.8V): 200us / 250us (typ); Multi-page program time (2 pages): 200us / 250us (3.0V/1.8V, Typ.).
Diagrams
