(China (Mainland))
Product Summary
The H5PS2562GFR-S6I is a 256Mb DDR2 SDRAM.
Parametrics
H5PS2562GFR-S6I absolute maximum ratings: (1)Voltage on VDD pin relative to Vss: -1.0 to +2.3 V; (2)Voltage on VddQ Supply Relative to Vss: -0.5 to 2.3 V; (3)Voltage on Vref and Inputs Relative to Vss: -0.5 to 2.3 V; (4)Storage Temperature: -55 to +100°C.
Features
H5PS2562GFR-S6I features: (1)VDD ,VDDQ =1.8 +/- 0.1V; (2)All inputs and outputs are compatible with SSTL_18 interface; (3)Fully differential clock inputs (CK, /CK) operation; (4)Double data rate interface; (5)Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS); (6)Differential Data Strobe (DQS, DQS); (7)Data outputs on DQS, DQS edges when read (edged DQ); (8)Data inputs on DQS centers when write(centered DQ); (9)On chip DLL align DQ, DQS and DQS transition with CK transition; (10)DM mask write data-in at the both rising and falling edges of the data strobe; (11)All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock; (12)Programmable CAS latency 3, 4, 5 and 6 supported; (13)Programmable additive latency 0, 1, 2, 3, 4 and 5 supported; (14)Programmable burst length 4 / 8 with both nibble sequential and interleave mode; (15)Internal four bank operations with single pulsed RAS; (16)Auto refresh and self refresh supported; (17)8K refresh cycles /64ms; (18)JEDEC standard 84ball FBGA(x16); (19)Full strength driver option controlled by EMRS; (20)On Die Termination supported; (21)Off Chip Driver Impedance Adjustment supported; (22)Self-Refresh High Temperature Entry; (23)Partial Array Self Refresh support.
Diagrams
