(China (Mainland))
Product Summary
The K4H511638G is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 8,388,608 words by 4/8/16bits, fabricated with SAMSUNGs high performance CMOS technology. The K4H511638G features with Data Strobe allow extremely high performance up to 400Mb/s per pin. Range of operating frequencies, programmable burst length and programmable latencies allow the K4H511638G to be useful for a variety of high performance memory system applications.
Parametrics
K4H511638G absolute maximum ratings: (1) Voltage on any pin relative to VSS VIN, VOUT: -0.5 to 3.6V; (2) Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ: -1.0 to 3.6V; (3) Storage temperature Tstg: -55 to +150°C; (4) Short circuit current Ios: 50mA.
Features
K4H511638G features: (1) VDD: 2.5V ±0.2V, VDDQ: 2.5V±0.3V for DDR255,333; (2) VDD: 2.6V±0.1V; (3) Double-data-rate architecture; two data transfers per clock cycle; (4) All inputs except data & DM are sampled at the positive going edge of the system clock(CK) ; (5) Data I/O transactions on both edges of data strobe; (6) Edge aligned data output, center aligned data input; (7) LDM,UDM for write masking only (x16) ; (8) DM for write masking only (x4, x8) .
Diagrams
