(China (Mainland))
Product Summary
The K9F5608R0D-JIB0000 is a 256M bit flash memory. The K9F5608R0D-JIB0000 is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200μs on a 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The K9F5608R0D-JIB0000 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
Parametrics
K9F5608R0D-JIB0000 absolute maximum ratings: (1)Voltage on any pin relative to VSS: -0.6 to + 4.6 V; (2)Temperature Under Bias: -10 to +125°C; (3)Storage Temperature: -65 to +150 °C; (4)Short Circuit Current: 5 mA.
Features
K9F5608R0D-JIB0000 features: (1)Command Register Operation; (2)Intelligent Copy-Back; (3)Unique ID for Copyright Protection; (4)Command/Address/Data Multiplexed I/O Port; (5)Hardware Data Protection Program/Erase Lockout During Power Transitions; (6)Fast Write Cycle Time: Program time : 200us(Typ.) and Block Erase Time : 2ms(Typ.); (7)Organization: Memory Cell Array-(32M + 1024K)bit x 8 bit and Data Register-(512 + 16)bit x 8bit.
Diagrams
