(China (Mainland))
Product Summary
The K9F6408U0C-VCB0 is an 8M(8,388,608)x8bit NAND Flash Memory. The K9F6408U0C-VCB0 is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typical 200ms and an erase operation can be performed in typical 2ms on an 8K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. The K9F6408U0C-VCB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage, digital voice recorder, digital still camera and other portable applications requiring non-volatility.
Parametrics
K9F6408U0C-VCB0 absolute maximum ratings: (1)Voltage on any pin relative to VSS: -0.6 to + 4.6 V; (2)Temperature Under Bias: -10 to +125°C; (3)Storage Temperature: -65 to +150 °C.
Features
K9F6408U0C-VCB0 features: (1)Command Register Operation; (2)Reliable CMOS Floating-Gate Technology: Endurance : 100K Program/Erase Cycles and Data Retention : 10 Years; (3)Command/Address/Data Multiplexed I/O Port; (4)Hardware Data Protection: Program/Erase Lockout During Power Transitions; (5)Block Erase Time : 2ms(Typ.); (6)Fast Write Cycle Time; (7)Random Access : 10us(Max.); (8)Automatic Program and Erase; (9)Memory Cell Array : (8M + 256K)bit x 8bit.
Diagrams
