(China (Mainland))
Product Summary
The NAND512W3A2DN6E is a monolithic integrated circuit fabricated in metal oxide semiconductor technology available in DIP and SOP packages.
Parametrics
NAND512W3A2DN6E absolute maximum ratings: (1)Supply voltage: -0.5 to + 22 V; (2)DC Input voltage: -0.5 to VDD + 0.5 V; (3)DC Input current: ± 10 mA; (4)Power dissipation per package: 200 mW.
Features
NAND512W3A2DN6E features: (1)Schmidt trigger action on each input with no external components; (2)Hysteresis voltage typically 0.9 V at VDD = 5 V and 2.3 V at VDD =10 V; (3)Noise immunity greater than 50% of VDD ( typ); (4)No limit on input rise and fall times; (5)Quiescent current specified up to 20 V; (6)Standardized symmetrical output characteristics; (7)5 V, 10 V and 15 V parametric ratings; (8)Input leakage current.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 NAND512W3A2DN6E |
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IC FLASH 512MBIT 48TSOP |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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NAND R |
Other |
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Data Sheet |
Negotiable |
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NAND S |
Other |
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Data Sheet |
Negotiable |
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NAND01G-A |
Other |
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Data Sheet |
Negotiable |
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NAND01G-AAZ3E |
Other |
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Data Sheet |
Negotiable |
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NAND01G-B |
Other |
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Data Sheet |
Negotiable |
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NAND01G-B2B |
Other |
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Data Sheet |
Negotiable |
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