Product Summary
The NSS12100XV6T1G is a low VCE(sat) transistor. The NSS12100XV6T1G is miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. The device is designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives.
Parametrics
NSS12100XV6T1G absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: -12 Vdc; (2)Collector-Base Voltage, VCBO: -12 Vdc; (3)Emitter-Base Voltage, VEBO: -5.0 Vdc; (4)Collector Current, Continuous, IC: -1.0A; (5)Collector Current, Peak, ICM: -2.0Adc; (6)Electrostatic Discharge, ESD: HBM Class 3MM Class C.
Features
NSS12100XV6T1G features: (1)High Current Capability (1 A); (2)High Power Handling (Up to 650 mW); (3)Low VCE(s) (150 mV Typical @ 500 mA); (4)Small Size; (5)This is a Pb-Free Device.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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NSS12100XV6T1G |
ON Semiconductor |
Transistors Bipolar (BJT) 12V PNP LOW VCE(SAT) XTR |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
NSS12100XV6T1G |
ON Semiconductor |
Transistors Bipolar (BJT) 12V PNP LOW VCE(SAT) XTR |
Data Sheet |
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NSS12200WT1G |
ON Semiconductor |
Transistors Bipolar (BJT) 2A 12V Low VCEsat |
Data Sheet |
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NSS12600CF8T1G |
ON Semiconductor |
Transistors Bipolar (BJT) SBN_BE (MY1) CHPFET 12V |
Data Sheet |
Negotiable |
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NSS12601CF8T1G |
ON Semiconductor |
Transistors Bipolar (BJT) HEX SCHMITT TRIGGER INVERTOR |
Data Sheet |
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NSS1C200LT1G |
ON Semiconductor |
Transistors Bipolar (BJT) 100V LO VCE(SAT) TRA PNP |
Data Sheet |
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NSS1C200MZ4T1G |
ON Semiconductor |
Transistors Bipolar (BJT) PNP SOT223 BIP POWER TRAN |
Data Sheet |
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