(China (Mainland))
Product Summary
The U6264ASK07LL is a static RAM manufactured using a CMOS process technology with the following operating modes: Read; Standby; Write; Data Retention. The memory array is based on a 6-transistor cell. The circuit is activated by the rising edge of E2 (at E1 = L), or the falling edge of E1 (at E2 = H). The address and control inputs open simultaneously. According to the information of W and G, the data inputs, or outputs, are active. During the active state (E1 = L and E2 = H), each address change leads to a new read or write cycle. In a read cycle, the data outputs are activated by the falling edge of G, afterwards the data word read will be available at the outputs.
Parametrics
U6264ASK07LL absolute maximum ratings: (1)Power supply voltage, VCC: -0.3 to 7 V; (2)Input voltage, VI: -0.3 to VCC+ 0.5 V; (3)Output voltage, VO: -0.3 to VCC+ 0.5 V; (4)Power dissipation, PD: 1 W; (5)Operating temperature C-type, Ta: 0 to 70 °C; G-Type, Ta: -25 to 85 °C; K-Type, Ta: -40 to 85 °C; (6)Storage temperature, Tstg: -55 to 125 °C.
Features
U6264ASK07LL features: (1)8192 x 8 bit static CMOS RAM; (2)70 and 100 ns access times; (3)Common data inputs and outputs; (4)Three-state outputs; (5)Typ. operating supply current: 70 ns: 45 mA; 100 ns: 37 mA; (6)Data retention current at 3 V: < 10 mA (standard); (7)Standby current standard < 30 mA; (8)Standby current low power (L)< 10 mA; (9)Standby current very low power (LL)< 1 mA; (10)Standby current for LL-version at 25 °C and 5 V: typ. 50 nA; (11)TTL/CMOS-compatible; (12)Automatic reduction of power dissipation in long read or write cycles; (13)Power supply voltage 5 V; (14)Operating temperature ranges: 0 to 70 °C; -25 to 85 °C; -40 to 85 °C; (15)Quality assessment according to CECC 90000, CECC 90100 and CECC 90111.
Diagrams
