Product Summary

The A80LTM350X98 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 × 16 × 4 (word × bit × bank). The synchronous DRAM achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous DRAM is compatible with Low Voltage TTL (LVTTL). This product is packaged in 54-pin TSOP (II).




Parametrics

A80LTM350X98 absolute maximum ratings: (1)voltage on power supply pin relative to gnd vcc, vccq: -0.5 to +4.6 v; (2)voltage on any pin relative to gnd vt: -0.5 to +4.6 v; (3)short circuit output current io: 50 ma; (4)power dissipation pd: 1 w; (5)operating ambient temperature ta: -20 to + 85 °c; (6)storage temperature tstg: -55 to + 125 °c.

Features

A80LTM350X98 features: (1)Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge; (2)Pulsed interface; (3)Possible to assert random column address in every cycle; (4)Quad internal banks controlled by BA0(A13)and BA1(A12); (5)Byte control by LDQM and UDQM; (6)Programmable Wrap sequence (Sequential / Interleave); (7)Programmable burst length (1, 2, 4, 8 and full page); (8)Programmable /CAS latency (2 and 3); (9)Ambient temperature (TA): 20 to + 85°C; (10)Automatic precharge and controlled precharge; (11)CBR (Auto)refresh and self refresh; (12)×16 organization; (13)Single 3.3 V ± 0.3 V power supply; (14)LVTTL compatible inputs and outputs; (15)4,096 refresh cycles / 64 ms; (16)Burst termination by Burst stop command and Precharge command.

Diagrams

A80LTM350X98 pin connection