(China (Mainland))
Product Summary
The EDS1216AABH-75-E is a 128M bits SDRAM organized as 2,097,152 words × 16 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock. Supply voltages are 3.3V. The EDS1216AABH-75-E is packaged in 54-ball FBGA.
Parametrics
EDS1216AABH-75-E absolute maximum ratings: (1)Voltage on any pin relative to VSS, VT: -0.5 to VDD + 0.5 (≤ 4.6 (max.)) V; (2)Supply voltage relative to VSS, VDD: -0.5 to +4.6 V; (3)Short circuit output current, IOS: 50 mA; (4)Power dissipation, PD: 1.0 W; (5)Operating ambient temperature, TA: 0 to +70℃; (6)Storage temperature, Tstg: -55 to +125℃.
Features
EDS1216AABH-75-E features: (1)3.3V and 2.5V power supply; (2)Clock frequency: 133MHz (max.); (3)Single pulsed /RAS; (4)×16 organization; (5)4 banks can operate simultaneously and independently; (6)Burst read/write operation and burst read/single write operation capability; (7)Programmable burst length (BL): 1, 2, 4, 8, full page; (8)2 variations of burst sequence, Sequential (BL = 1, 2, 4, 8, full page); Interleave (BL = 1, 2, 4, 8); (9)Programmable /CAS latency (CL): 2, 3; (10)Byte control by UDQM and LDQM; (11)Refresh cycles: 4096 refresh cycles/64ms; (12)2 variations of refresh, Auto refresh; Self refresh; (13)FBGA package with lead free solder (Sn-Ag-Cu).
Diagrams
