Product Summary

The H26M21001DAR is a high dynamic range FET packaged in a low-cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point makes the FH1-G ideal for receiver and transmitter applications. The device combines dependable performance with superb quality to maintain MTTF values exceeding 100 years at mounting temperatures of +85 qC. The FH1-G is available the enviornmentally-friendly lead-free/green/RoHS-compliant SOT-89 package. The applications of the FH1-G are (1)Mobile Infrastructure; (2)CATV / DBS; (3)W-LAN / ISM; (4)Defense / Homeland Security.

Parametrics

H26M21001DAR absolute maximum ratings: (1)Operating Case Temperature -40 to +85℃; (2)Storage Temperature -55 to +150℃; (3)Drain to Source Voltage +7 V; (4)Gate to Source Voltage -6 V; (5)Gate Current 4.5 mA; (6)RF Input Power (continuous) 4 dB above Input P1dB; (7)Junction Temperature +220℃.

Features

H26M21001DAR features: (1)50 – 3000 MHz; (2)Low Noise Figure; (3)18 dB Gain; (4)+42 dBm OIP3; (5)+21 dBm P1dB; (6)Single or Dual Supply Operation; (7)Lead-free/Green/RoHS-compliant SOT-89 Package; (8)MTTF > 100 years.

Diagrams

H26M21001DAR block diagram