(China (Mainland))
Product Summary
The HY57V283220T-6 is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. The HY57V283220T-6 is organized as 4banks of 1,048,576x32.
Parametrics
HY57V283220T-6 absolute maximum ratings: (1)Ambient Temperature TA: 0 ~ 70 °C; (2)Storage Temperature TSTG: -55 ~ 125 °C; (3)Voltage on Any Pin relative to VSS VIN, VOUT: -1.0 ~ 4.6 V; (4)Voltage on VDD relative to VSS VDD, VDDQ: -1.0 ~ 4.6 V; (5)Short Circuit Output Current IOS: 50 mA; (6)Power Dissipation PD: 1 W.
Features
HY57V283220T-6 features: (1)JEDEC standard 3.3V power supply; (2)All device pins are compatible with LVTTL interface; (3)86TSOP-II, 90Ball FBGA with 0.8mm of pin pitch; (4)All inputs and outputs referenced to positive edge of system clock; (5)Data mask function by DQM0,1,2 and 3; (6)Internal four banks operation.
Diagrams
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HY57V161610D |
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HY57V161610D-I |
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HY57V161610ET-I |
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HY57V161610ETP-I |
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