IRLML6401

p-channel mosfet, -3.4V, 1.8V, SOT

Rated 5 Rating 5 | reviews | Write a review

Price:: US $3.50~4.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	4.00 / Piece
101 ~ 200 :	3.80 / Piece
201 ~ 300 :	3.50 / Piece

PartNumber:: IRLML6401

Brand:: International Rectifier - IR | Pack: SOT | D/C: 11+

Availability:: Supply Ability: 500/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-03-31

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Part Number:IRLML6401
US $3.50 - 4.00
Quantity:

piece

Product Summary

The IRLML6401 P-Channel MOSFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of the IRLML6401, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides he designer with an extremely efficient and reliable device for use in battery and load management. The package of the IRLML6401, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium.

Parametrics

IRLML6401 absolute maximum ratings: (1) Drain- Source Voltage VDS: -12V; (2) Continuous Drain Current, VGS@ -4.5V, ID@TA=25°C: -4.3A, Continuous Drain Current,VGS@ -4.5V, ID@TA=70°C: -3.4A, Pulsed Drain Current IDM: -34A; (3) Power Dissipation PD@TA=25°C: 1.3W; (4) CPower Dissipation, PD@TA70°C: 0.8w; (5) Linear Derating Factor: 0.01W/°C; (6) Single Pulse Avalanche Energy EAS: 33mJ; (7) Gate-to-Source Voltage VGS: ±8.0V; (8) Junction and Storage Temperature Range: -55 to +150°C.

Features

IRLML6401 features: (1) Ultra Low On-Resistance; (2) P-Channel MOSFETSOT-23 Footprint; (3) Low Profile (<1.1mm); (4) Available in Tape and Reel; (5) Fast Switching;(6) 1.8V Gate Rated.