Product Summary

The IRLML6401 P-Channel MOSFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of the IRLML6401, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides he designer with an extremely efficient and reliable device for use in battery and load management. The package of the IRLML6401, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium.

Parametrics

IRLML6401 absolute maximum ratings: (1) Drain- Source Voltage VDS: -12V; (2) Continuous Drain Current, VGS@ -4.5V, ID@TA=25°C: -4.3A, Continuous Drain Current,VGS@ -4.5V, ID@TA=70°C: -3.4A, Pulsed Drain Current IDM: -34A; (3) Power Dissipation PD@TA=25°C: 1.3W; (4) CPower Dissipation, PD@TA70°C: 0.8w; (5) Linear Derating Factor: 0.01W/°C; (6) Single Pulse Avalanche Energy EAS: 33mJ; (7) Gate-to-Source Voltage VGS: ±8.0V; (8) Junction and Storage Temperature Range: -55 to +150°C.

Features

IRLML6401 features: (1) Ultra Low On-Resistance; (2) P-Channel MOSFETSOT-23 Footprint; (3) Low Profile (<1.1mm); (4) Available in Tape and Reel; (5) Fast Switching;(6) 1.8V Gate Rated.

Diagrams

IRLML6401 Circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRLML6401
IRLML6401
Other

Data Sheet
Negotiable 
IRLML6401GTRPBF
IRLML6401GTRPBF
International Rectifier
MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl
Data Sheet
0-1: $0.32
1-25: $0.18
25-100: $0.12
100-250: $0.11
IRLML6401TRPBF
IRLML6401TRPBF
International Rectifier
MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl
Data Sheet
0-1: $0.31
1-25: $0.17
25-100: $0.11
100-250: $0.10
IRLML6401TR
IRLML6401TR

MOSFET P-CH 12V 4.3A SOT-23
Data Sheet
Negotiable 
IRLML6401PbF
IRLML6401PbF
Other

Data Sheet
Negotiable