K4T51163QG-HCE6

K4T51163QG-HCE6, 512Mb G-die DDR2 SDRAM, BGA, -1.0 V to 2.3 V, 90mA, Samsung semiconductor

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Price:: US $2.50~3.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 300 :	3.00 / Piece
301 ~ 600 :	2.80 / Piece
601 ~ 1000 :	2.50 / Piece

PartNumber:: K4T51163QG-HCE6

Brand:: Samsung semiconductor - SAMSUNG | Pack: BGA | D/C: 11+

Availability:: Supply Ability: 1000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-05-07

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Part Number:K4T51163QG-HCE6
US $2.50 - 3.00
Quantity:

piece

Product Summary

The K4T51163QG-HCE6 is a 512Mb G-die DDR2 SDRAM.

Parametrics

K4T51163QG-HCE6 absolute maximum ratings: (1)VDD Voltage on VDD pin relative to VSS: - 1.0 V to 2.3 V; (2)VDDQ Voltage on VDDQ pin relative to VSS: - 0.5 V to 2.3 V; (3)VDDL Voltage on VDDL pin relative to VSS: - 0.5 V to 2.3 V; (4)VIN, VOUT Voltage on any pin relative to VSS: - 0.5 V to 2.3 V; (5)TSTG Storage Temperature: -55 to +100 ℃.

Features

K4T51163QG-HCE6 features: (1)JEDEC standard VDD = 1.8V ± 0.1V Power Supply; (2)VDDQ = 1.8V ±0.1V; (3)200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/; (4)pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/; (5)sec/pin; (6)4 Banks; (7)Posted CAS; (8)Programmable CAS Latency: 3, 4, 5, 6; (9)Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5; (10)Write Latency(WL) = Read Latency(RL) -1; (11)Burst Length: 4 , 8(Interleave/Nibble sequential); (12)Programmable Sequential / Interleave Burst Mode; (13)Bi-directional Differential Data-Strobe (Single-ended datastrobe is an optional feature); (14)Off-Chip Driver(OCD) Impedance Adjustment; (15)On Die Termination; (16)Special Function Support -50ohm ODT; -High Temperature Self-Refresh rate enable; (17)Average Refresh Period 7.8us at lower than TCASE 85℃, 3.9us at 85℃ < TCASE < 95 ℃; (18)All of products are Lead-Free, Halogen-Free, and RoHS compliant.