(China (Mainland))
Product Summary
The K4X51323PG-8GC6 is a 16M x32 Mobile-DDR SDRAM.
Parametrics
K4X51323PG-8GC6 absolute maximum ratings: (1)Voltage on any pin relative to VSS VIN, VOUT: -0.5 ~ 2.7 V; (2)Voltage on VDD supply relative to VSS VDD: -0.5 ~ 2.7 V; (3)Voltage on VDDQ supply relative to VSS VDDQ: -0.5 ~ 2.7 V; (4)Storage temperature TSTG: -55 ~ +150℃; (5)Power dissipation PD: 1.0 W; (6)Short circuit current IOS: 50 mA.
Features
K4X51323PG-8GC6 features: (1)1.8V power supply, 1.8V I/O power; (2)Double-data-rate architecture; two data transfers per clock cycle; (3)Bidirectional data strobe(DQS); (4)Four banks operation; (5)1 /CS; (6)1 CKE; (7)Differential clock inputs(CK and CK); (8)MRS cycle with address key programs, CAS Latency ( 2, 3 ); Burst Length ( 2, 4, 8, 16 ); Burst Type (Sequential & Interleave); Partial Self Refresh Type ( Full, 1/2, 1/4 Array ); Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 ); (9)Internal Temperature Compensated Self Refresh; (10)Deep Power Down Mode; (11)All inputs except data & DM are sampled at the positive going edge of the system clock(CK); (12)Data I/O transactions on both edges of data strobe, DM for masking; (13)Edge aligned data output, center aligned data input; (14)No DLL; CK to DQS is not synchronized; (15)DM0 - DM3 for write masking only; (16)Auto refresh duty cycle, 7.8us for -25 to 85℃.
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