(China (Mainland))
Product Summary
The K524G2GACB-AO50 is a Multi Chip Package Memory which combines 4Gbit NAND Flash Memory an 2Gbit DDR synchronous high data rate Dynamic RAM. NAND cell of the K524G2GACB-AO50 provides the most cost-effective solution for the solid state application market. The K524G2GACB-AO50 is suitable for use in data memory of mobile communication system to reduce not only mount area but also power consumption.
Parametrics
K524G2GACB-AO50 absolute maximum ratings: (1) Voltage on any pin relative to VSS, VCC: -0.6 to +2.45V, VIN: -0.6 to +2.45V, VI/O: -0.6V to VCC +0.3V (< 2.45V); (2) Temperature Under Bias TBIAS: -30°C to +125°C; (3) Storage Temperature TSTG: -65°C to +150°C; (4) Short Circuit Current IOS: 5mA.
Features
K524G2GACB-AO50 features: (1) perating Temperature : -25°C to 85°C; (2) Voltage Supply : 1.7V ~ 1.95V; (3) Memory Cell Array : (256M + 8M) x 16bit for 4Gb; (4) Automatic Program and Erase; (5) Unique ID for Copyright Protection; (6) DM0 - DM3 for write masking only.
Diagrams
