Product Summary

The K6X8008T2B-UF70 is a Low Power and Low Voltage CMOS Static RAM. The K6X8008T2B-UF70 is fabricated by SAMSUNG’s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The K6X8008T2B-UF70 also support low data retention voltage for battery back-up operation with low data retention current.

Parametrics

K6X8008T2B-UF70 absolute maximum ratings: (1)Voltage on any pin relative to Vss VIN, VOUT: -0.2 to VCC+0.3 (max. 3.9V) V; (2)Voltage on Vcc supply relative to Vss VCC: -0.2 to 3.9 V; (3)Power Dissipation, PD: 1.0 W; (4)Storage temperature, TSTG: -65 to 150℃; (5)Operating Temperature, TA: -40 to 85℃.

Features

K6X8008T2B-UF70 features: (1)Process Technology: Full CMOS; (2)Organization: 1M x8; (3)Power Supply Voltage: 2.7~3.6V; (4)Low Data Retention Voltage: 1.5V(Min); (5)Three state outputs; (6)Package Type: 44-TSOP2-400F.

Diagrams

K6X8008T2B-UF70 block diagram