Product Summary
The K9F1208U0C-JIB0T00 is a flash memory. It is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200μs on the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can be read out at 42ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0C′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
Parametrics
K9F1208U0C-JIB0T00 absolute maximum ratings: (1)voltage on any pin relative to vss vcc: -0.6 to + 4.6 V; VIN: -0.6 to + 4.6 V; (2)Temperature Under Bias TBIAS: -10 to +125°C; (3)Storage Temperature TSTG: -65 to +150°C; (4)Short Circuit Current IOS: 5 mA.
Features
K9F1208U0C-JIB0T00 features: (1)voltage supply: 1.8v device(k9f1208r0c): 1.65v ~ 1.95v; 2.7v device(k9f1208b0c): 2.5v ~ 2.9v; 3.3v device(k9f1208u0c): 2.7v ~ 3.6v.; (2)organization: memory cell array : (64m + 2m)x 8bits; data register : (512 + 16)x 8bits; (3)automatic program and erase: page program : (512 + 16)x 8bits; block erase : (16k + 512)bytes; (4)page read operation: page size : (512 + 16)bytes; random access : 15μs(max.); serial page access : 42ns(min.); (5)fast write cycle time: program time : 200μs(typ.); block erase time : 2ms(typ.); (6)command/address/data multiplexed i/o port; (7)hardware data protection: program/erase lockout during power transitions.