(China (Mainland))
Product Summary
The K9F4G08UOD-SCBO is a 512M x 8 Bit / 1G x 8 Bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200μs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve of the K9F4G08UOD-SCBO as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F4G08UOD-SCBO’s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
Parametrics
K9F4G08UOD-SCBO absolute maximum ratings: (1)Voltage on any pin relative to VSS: -0.6 to + 4.6 V; (2)Temperature Under Bias: -10 to +125 ℃; (3)Storage Temperature: -65 to +150 ℃; (4)Short Circuit Current Ios: 5 mA.
Features
K9F4G08UOD-SCBO features: (1)Voltage Supply: 2.70V ~ 3.60V; (2)Organization: Memory Cell Array: (512M + 16M) x 8bit, Data Register: (2K + 64) x 8bit; (3)Automatic Program and Erase: Page Program: (2K + 64)Byte, Block Erase: (128K + 4K)Byte; (4)Page Read Operation: Page Size : (2K + 64)Byte, Random Read: 25μs(Max.), Serial Access: 25ns(Min.); (5)Fast Write Cycle Time: Page Program time: 200μs(Typ.), Block Erase Time: 1.5ms(Typ.); (6)Command/Address/Data Multiplexed I/O Port; (7)Hardware Data Protection: Program/Erase Lockout During Power Transitions; (8)Reliable CMOS Floating-Gate Technology: Endurance: 100K Program/Erase Cycles(with 1bit/512Byte ECC), Data Retention: 10 Years.
Diagrams
