Product Summary

The M29W800DB is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and eprogrammed. The M29W800DB is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The M29W800DB is offered in SO44, TSOP48 (12 x20mm) , TFBGA48 6 x 9mm (0.8mm pitch) and TFBGA48 6 x 8mm (0.8mm pitch) packages.

Parametrics

M29W800DB absolute maximum ratings: (1) Temperature Under Bias TBIAS: -50 to 125°C; (2) Storage Temperature Tstg: -65 to 150°C; (3) Input or Output Voltage VIO: -0.6 to Vcc +0.6V; (4) Supply Voltage Vcc: -0.6 to 4V; (5) Identification Voltage VID: -0.6 to 13.5V.

Features

M29W800DB features: (1) supply voltage: VCC=2.7V to 3.6V for Program, Erase and Read; (2) Access times: 45, 70, 90ns; (3) programming time: 10μs; (4) program/erase controller; (5) common flash interface; (6) low power consumption.

Diagrams

M29W800DB Block Diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
M29W800DB
M29W800DB

Other


Data Sheet

Negotiable 
M29W800DB45N6E
M29W800DB45N6E

STMicroelectronics

Flash 8 MBIT (1MB) 3V SUPPLY

Data Sheet

Negotiable 
M29W800DB45N6F
M29W800DB45N6F

STMicroelectronics

Flash STD FLASH

Data Sheet

Negotiable 
M29W800DB45ZE6F
M29W800DB45ZE6F

STMicroelectronics

Flash STD FLASH

Data Sheet

Negotiable 
M29W800DB45ZE6E
M29W800DB45ZE6E

STMicroelectronics

Flash 8 MBIT (1MB) 3V SUPPLY

Data Sheet

Negotiable 
M29W800DB70M6
M29W800DB70M6

STMicroelectronics

Flash 1Mx8 or 512Kx16 70ns

Data Sheet

Negotiable 
M29W800DB70N6F
M29W800DB70N6F

STMicroelectronics

Flash STD FLASH 8 MEG

Data Sheet

Negotiable 
M29W800DB70N6E
M29W800DB70N6E

STMicroelectronics

Flash 1Mx8 or 512Kx16 70ns

Data Sheet

Negotiable