Product Summary
The M29W800DB is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and eprogrammed. The M29W800DB is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The M29W800DB is offered in SO44, TSOP48 (12 x20mm) , TFBGA48 6 x 9mm (0.8mm pitch) and TFBGA48 6 x 8mm (0.8mm pitch) packages.
Parametrics
M29W800DB absolute maximum ratings: (1) Temperature Under Bias TBIAS: -50 to 125°C; (2) Storage Temperature Tstg: -65 to 150°C; (3) Input or Output Voltage VIO: -0.6 to Vcc +0.6V; (4) Supply Voltage Vcc: -0.6 to 4V; (5) Identification Voltage VID: -0.6 to 13.5V.
Features
M29W800DB features: (1) supply voltage: VCC=2.7V to 3.6V for Program, Erase and Read; (2) Access times: 45, 70, 90ns; (3) programming time: 10μs; (4) program/erase controller; (5) common flash interface; (6) low power consumption.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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M29W800DB |
Other |
Data Sheet |
Negotiable |
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M29W800DB45N6E |
STMicroelectronics |
Flash 8 MBIT (1MB) 3V SUPPLY |
Data Sheet |
Negotiable |
|
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M29W800DB45N6F |
STMicroelectronics |
Flash STD FLASH |
Data Sheet |
Negotiable |
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M29W800DB45ZE6F |
STMicroelectronics |
Flash STD FLASH |
Data Sheet |
Negotiable |
|
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M29W800DB45ZE6E |
STMicroelectronics |
Flash 8 MBIT (1MB) 3V SUPPLY |
Data Sheet |
Negotiable |
|
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M29W800DB70M6 |
STMicroelectronics |
Flash 1Mx8 or 512Kx16 70ns |
Data Sheet |
Negotiable |
|
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M29W800DB70N6F |
STMicroelectronics |
Flash STD FLASH 8 MEG |
Data Sheet |
Negotiable |
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M29W800DB70N6E |
STMicroelectronics |
Flash 1Mx8 or 512Kx16 70ns |
Data Sheet |
Negotiable |
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