(China (Mainland))
Product Summary
The MT18LSDT6472Y-13ED2 is a 512MB 168-Pin SDRAM. The MT18LSDT6472Y-13ED2 provides for programmable READ or WRITE burst lengths of 1, 2, 4, or 8 locations, or the full page, with a burst terminate option. An AUTO PRECHARGE function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. Also it offers substantial advances in DRAM operating performance, including the ability to synchronously burst data at a high data rate with automatic columnaddress generation. The MT18LSDT6472Y-13ED2 uses an internal pipelined architecture to achieve high-speed operation. This architecture is compatible with the 2n rule of prefetch architectures, but it also allows the column address to be changed on every clock cycle to achieve a high-speed, fully random access.
Parametrics
MT18LSDT6472Y-13ED2 absolute maximum ratings: (1)Voltage on VDD, VDDQ supply relative to VSS: -1 to +4.6 V; (2)Voltage on inputs NC or I/O pins relative to VSS: -1 to +4.6 V; (3)Operating temperature TOPR (commercial - ambient): 0 to +65 °C; (4)Storage temperature (plastic): -55 to +150 °C.
Features
MT18LSDT6472Y-13ED2 features: (1)PC100- and PC133-compliant; (2)168-pin, dual in-line memory module (DIMM); (3)Unbuffered, ECC-optimized pinout; (4)512MB (64 Meg x 72) and 1GB (128 Meg x 72); (5)Single +3.3V power supply; (6)Fully synchronous; all signals registered on positive edge of system clock; (7)Internal pipelined operation; column address can be changed every clock cycle; (8)Internal SDRAM banks for hiding row access/ precharge; (9)Programmable burst lengths: 1, 2, 4, 8, or full page; (10)Auto precharge, includes concurrent auto precharge, and auto refresh modes; (11)Self refresh mode; (12)64ms, 8,192-cycle refresh; (13)LVTTL-compatible inputs and outputs; (14)Serial presence-detect (SPD); (15)Gold edge contacts.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MT18LSDT6472Y-13ED2 |
|
MODULE SDRAM 512MB 168DIMM |
Data Sheet |
Negotiable |
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
MT18-250L 50/BAG |
3M Electronic Specialty |
Terminals 22-18 NON-INSUL TAB |
Data Sheet |
|
|
||||||||||||
 |
MT18HTF12872AY-40EB1 |
|
MODULE SDRAM DDR2 1GB 240DIMM |
Data Sheet |
Negotiable |
|
||||||||||||
|
MT18HTF12872AY-40ED4 |
Micron Technology Inc |
MODULE SDRAM DDR2 1GB 240DIMM |
Data Sheet |
|
|
||||||||||||
|
MT18HTF12872AY-53EB1 |
|
MODULE SDRAM DDR2 1GB 240DIMM |
Data Sheet |
Negotiable |
|
||||||||||||
|
MT18HTF12872AY-53ED4 |
|
MODULE DDR2 1GB 240-DIMM |
Data Sheet |
Negotiable |
|
||||||||||||
|
MT18HTF12872AY-667B3 |
|
MODULE DDR2 1GB 240-DIMM |
Data Sheet |
Negotiable |
|
||||||||||||
