(China (Mainland))
Product Summary
The MT29F2G16AADWP:D is an NAND flash memory.
Parametrics
MT29F2G16AADWP:D absolute maximum ratings: (1)Voltage input, 3.3V, VIN: –0.6 to +4.6 V; (2)Voltage input, 1.8V, VIN: –0.6 to +2.4 V; (3)VCC supply voltage, 3.3V, VCC: –0.6 to +4.6 V; (4)VCC supply voltage, 1.8V, VCC: –0.6 to +2.4 V; (5)Storage temperature, TSTG: –65 to +150 °C; (6)Short circuit output current, I/Os: 5 mA.
Features
MT29F2G16AADWP:D features: (1)Open NAND flash interface (ONFI)1.0-compliant; (2)Single-level cell (SLC)technology; (3)READ performance: Random read: 25μs; Sequential read: 25ns (3.3V); Sequential read: 35ns (1.8V); (4)Write performance: Program page: 220μs (typ, 3.3V); Program pagE: 300μs (typ, 1.8V); Block erase: 500μs (TYP); (5)Data retention: 10 years; (6)Endurance: 100,000 program/erase cycles; (7)First block (block address 00h)guaranteed to be valid with ECC when shipped from factory1; (8)Industry-standard basic NAND flash command set; (9)Advanced command set: Program page cache mode; Page read cache mode; One-time programmable (OTP)commands; Block lock (1.8V only); Programmable drive strength; Read unique ID.
Diagrams
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 MT29F2G16AADWP:D TR |
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IC FLASH 2GBIT 48TSOP |
Data Sheet |
Negotiable |
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