Product Summary

The MT41J256M16RE-15E is a DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the MT41J256M16RE-15E effectively consists of a single 8n-bit-wide, four-clockcycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, onehalf-clock-cycle data transfers at the I/O pins.

Parametrics

MT41J256M16RE-15E absolute maximum ratings: (1)VDD VDD supply voltage relative to VSS: -0.4 to 1.975 V; (2)VDDQ VDD supply voltage relative to VSSQ: -0.4 to 1.975 V; (3)VIN, VOUT Voltage on any pin relative to VSS: -0.4 to 1.975 V; (4)TC Operating case temperature - Commercial: 0 to 95℃; (5)Operating case temperature - Industrial: -40 to 95℃; (6)Operating case temperature - Automotive: -40 to 105℃; (7)TSTG Storage temperature: -55 to 150℃.

Features

MT41J256M16RE-15E features: (1)VDD = VDDQ = 1.5V ±0.075V; (2)1.5V center-terminated push/pull I/O; (3)Differential bidirectional data strobe; (4)8n-bit prefetch architecture; (5)Differential clock inputs (CK, CK#); (6)8 internal banks; (7)Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals; (8)Programmable CAS READ latency (CL); (9)Posted CAS additive latency (AL); (10)Programmable CAS WRITE latency (CWL) based on tCK; (11)Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]); (12)Selectable BC4 or BL8 on-the-fly (OTF); (13)Self refresh mode; (14)TC of 0℃ to 95℃; (15)64ms, 8192 cycle refresh at 0℃ to 85℃; (16)32ms, 8192 cycle refresh at 85℃ to 95℃; (17)Self refresh temperature (SRT); (18)Write leveling; (19)Multipurpose register; (20)Output driver calibration.

Diagrams

MT41J256M16RE-15E block diagram

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MT41J256M16RE-15E IT:D
MT41J256M16RE-15E IT:D


MODULE DDR3 SDRAM 4GB 96FBGA

Data Sheet

0-1000: $24.24
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