NAND08GW3B2CN6

NAND08GW3B2CN6, NAND Flash memory, TSOP, -0.6 to 4.6 V, 20mA, STMicroelectronics

Rated 5 Rating 5 | reviews | Write a review

Price:: US $2.50~3.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 300 :	3.00 / Piece
301 ~ 600 :	2.80 / Piece
601 ~ 1000 :	2.50 / Piece

PartNumber:: NAND08GW3B2CN6

Brand:: STMicroelectronics - ST | Pack: TSOP | D/C: 11+

Availability:: Supply Ability: 1000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Not exactly what you want? Post a quick Buying Request!

Sold By

Ms. Alice's store

(China (Mainland))

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2013-04-09

From Other Seller

Part Number:NAND08GW3B2CN6
US $2.50 - 3.00
Quantity:

piece

Product Summary

The NAND08GW3B2CN6 is an NAND Flash 2112 byte/1056 word page family of non-volatile Flash memory. The NAND08GW3B2CN6 uses NAND cell technology have a density of 4 Gbits and 8 Gbits, respectively. The NAND08GW3B2CN6 memory array is split into 2 planes of 2048 blocks each. This multiplane architecture makes it possible to program 2 pages at a time (one in each plane), or to erase 2 blocks at a time (one in each plane). This feature reduces the average program and erase times by 50%.

Parametrics

NAND08GW3B2CN6 absolute maximum ratings: (1)TBIAS, Temperature under bias: -50 to 125℃; (2)TSTG, Storage temperature: -65 to 150℃; (3)VIO, Input or output voltage: -0.6 to 4.6 V; (4)VDD, Supply voltage: -0.6 to 4.6 V.

Features

NAND08GW3B2CN6 features: (1)High density NAND Flash Memory, Up to 8 Gbit memory array; Cost-effective solution for mass storage applications; (2)NAND interface, x8 or 16x bus width; Multiplexed address/data; (3)Supply voltage: 1.8 V or 3.0 V device; (4)Page size, x8 device: (2048 + 64 spare) bytes; x16 device: (1024 + 32 spare) words; (5)Block size, x8 device: (128K + 4 K spare) bytes; x16 device: (64K + 2 K spare) words; (6)Multiplane architecture, Array split into two independent planes; Program/erase operations can be performed on both planes at the same time; (7)Page read/program, Random access: 25 μs (max); Sequential access: 25 ns (min); Page program time: 200 μs (typ); Multiplane page program time (2 pages): 200 μs (typ); (8)Copy back program with automatic error detection code (EDC); (9)Cache read mode; (10)Fast block erase, Block erase time: 1.5 ms (typ); Multiblock erase time (2 blocks): 1.5 ms (typ); (11)Status Register; (12)Electronic signature; (13)Chip Enable don’t care; (14)Serial number option.