(China (Mainland))
Product Summary
The NAND128W3A2BN6E NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memory that uses the Single Level Cell (SLC) NAND cell technology. The NAND128W3A2BN6E is referred to as the Small Page family. The NAND128W3A2BN6E ranges from 128Mbits to 1Gbit and operates with either a 1.8V or 3V voltage supply.The NAND128W3A2BN6E features an open-drain Ready/Busy output that can be used to identify if the Program/Erase/Read (P/E/R) Controller is currently active.
Parametrics
NAND128W3A2BN6E absolute maximum ratings: (1) Temperature Under Bias TBIAS: -50°C to 125°C; (2) Storage Temperature TSTG: -65°C to 150°C; (3) Input or Output Voltage, 1.8V devices: -0.6V to 2.7V, 3V device: -0.6V to 4.6V; (4) Supply Voltage VDD: -0.6V to 2.7V, 3V device: -0.6V to 4.6V.
Features
NAND128W3A2BN6E features: (1) HIGH DENSITY NAND FLASH MEMORIES; (2) CCost effective solutions for mass storage applications; (3) NAND INTERFACE; (4) CFast page copy without external buffering; (5) FAST BLOCK ERASE; (6) CSimple interface with microcontroller; (7) HARDWARE DATA PROTECTION; (8) CHardware simulation model.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 NAND128W3A2BN6E |
STMicroelectronics |
Flash NAND 128 MEG |
Data Sheet |
Negotiable |
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NAND R |
Other |
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Data Sheet |
Negotiable |
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NAND S |
Other |
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Data Sheet |
Negotiable |
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NAND01G-A |
Other |
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Data Sheet |
Negotiable |
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NAND01G-AAZ3E |
Other |
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Data Sheet |
Negotiable |
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NAND01G-B |
Other |
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Data Sheet |
Negotiable |
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NAND01G-B2B |
Other |
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Data Sheet |
Negotiable |
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