(China (Mainland))
Product Summary
The NT5TU64M16GG-AC is a 1Gb Double-Data-Rate-2 (DDR2) DRAM. It is a high-speed CMOS Double Data Rate 2 SDRAM containing 1,073,741,824 bits. The NT5TU64M16GG-AC is internally configured as an octal-bank DRAM. The 1Gb chip is organized as 16Mbit × 8 I/O × 8 bank or 8Mbit × 16 I/O × 8 bank device. The NT5TU64M16GG-ACI achieves high speed double-data-rate transfer rates of up to 1066 Mb/sec/pin for general applications.
Parametrics
NT5TU64M16GG-AC absolute maximum ratings: (1)VDD Voltage on VDD pin relative to VSS: -1.0 to + 2.3 V; (2)VDDQ Voltage on VDDQ pin relative to VSS: -0.5 to + 2.3 V; (3)VDDL Voltage on VDDL pin relative to VSS: -0.5 to + 2.3 V; (4)VIN, VOUT Voltage on any pin relative to VSS: -0.5 to + 2.3 V; (5)TSTG Storage Temperature: -55 to + 100 ℃.
Features
NT5TU64M16GG-AC features: (1)VDD=VDDQ=1.8V ± 0.1V Voltage, JEDEC standard 1.8V I/O (SSTL_18 compatible); (2)8 internal memory banks; (3)Programmable Additive Latency: 0, 1, 2, 3, 4 5; (4)Write Latency = Read Latency -1; (5)Programmable Burst Length; (6)4 and 8 Programmable Sequential / Interleave Burst; (7)OCD (Off-Chip Driver Impedance Adjustment); (8)ODT (On-Die Termination); (9)4n-bit prefetch architecture; (10)Strong and Weak Strength Data-Output Driver; (11)Auto-Refresh and Self-Refresh; (12)Power Saving Power-Down modes; (13)7.8 μs max. Average Periodic Refresh Interval; (14)RoHS Compliance and Halogen Free.
Diagrams
 |
 NT5TU32M16AG-37B |
Other |
|
Data Sheet |
Negotiable |
|
||||
