(China (Mainland))
Product Summary
The S29GL064A90TFIR4 is a 3.0 V single power flash memory. The S29GL064A90TFIR4 requires only a single 3.0 volt power supply for both read and write functions. In addition to a VCC input, a high-voltage accelerated program (ACC) feature provides shorter programming times through increased current on the WP#/ACC input. This feature is intended to facilitate factory throughput during system production, but may also be used in the field if desired. Access times as fast as 90 ns are available. Note that each access time of the S29GL064A90TFIR4 has a specific operating voltage range (VCC) as specified in the Product Selector Guide and the Ordering Information sections.
Parametrics
S29GL064A90TFIR4 absolute maximum ratings: (1)Storage temperature:–65 °C to +150°C; (2)Ambient temperature with power applied:–65°C to +125°C; (3)Voltage with Respect to Ground VCC:–0.5 V to +4.0 V; (4)Voltage with Respect to Ground A9, OE#, ACC and RESET#: -0.5 V to +12.5 V; (5)Output Short Circuit Current: 200 mA.
Features
S29GL064A90TFIR4 features: (1)Single power supply operation: 3 volt read, erase, and program operations; (2)Manufactured on 200 nm MirrorBit process technology; (3)128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence; (4)May be programmed and locked at the factory or by the customer; (5)Compatibility with JEDEC standards; (6)100,000 erase cycles typical per sector; (7)20-year data retention typical; (8)90 ns access time; (9)4-word/8-byte page read buffer; (10)25 ns page read times; (11)16-word/32-byte write buffer which reduces overall programming time for multiple-word updates; (12)Low power consumption (typical values at 3.0 V, 5 MHz); (13)Hardware reset input (RESET#) resets device; (14)Ready/Busy# output (RY/BY#) detects program or erase cycle completion; (15)Sector Group Protection: hardware-level method of preventing write operations within a sector group.
Diagrams
