Product Summary
The S29GL064N90TFI040 is a 3.0-Volt single-power Flash memory manufactured using 110nm MirrorBit technology. The S29GL064N90TFI040 is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL064N90TFI040 requires only a single 3.0-Volt power supply for both read and write functions. The S29GL064N90TFI040 is entirely command set compatible with the JEDEC single-power-supply Flash standard.
Parametrics
S29GL064N90TFI040 absolute maximum ratings: (1) Storage Temperature, Plastic Packages: -65°C to +150°C; (2) Ambient Temperature with Power Applied: -65°C to +125°C; (3) Voltage with Respect to Ground, VCC: -0.5V to +4.0V, A9, OE#, ACC and RESET# : -0.5V to +12.5V, All other pins: -0.5V to Vcc +0.5V; (4) Output Short Circuit Current: 200mA.
Features
S29GL064N90TFI04 features: (1) Single power supply operation; (2) Manufactured on 110 nm MirrorBit process technology; (3) Secured Silicon Sector region; (4) Flexible sector architecture; (5) Compatibility with JEDEC standards; (6) 20-year data retention typical; (7) 16-word/32-byte write buffer which reduces overall programming time for multiple-word updates; (8) CReady/Busy# output (RY/BY#) detects program or erase cycle completion.
Diagrams
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![]() S29GL064N90TFI040 |
![]() Spansion |
![]() Flash 3V 64Mb Float Gate highest address 90s |
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![]() S29GL01GP11FAIR10 |
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![]() Flash IC 1GIG 3.0V FLSHMEM |
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![]() S29GL01GP11FAIR20 |
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![]() Flash 1GB 3.0-3.6V 110ns |
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![]() S29GL01GP11FFCR10 |
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![]() Flash 1GB 3.0-3.6V 110ns PBF |
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![]() S29GL01GP11FFCR20 |
![]() Spansion |
![]() Flash 1GB 3.0-3.6V 110ns PBF |
![]() Data Sheet |
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