(China (Mainland))
Product Summary
The S29GL256N10TFI01 is a 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL256N10TFI01 is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes.
Parametrics
S29GL256N10TFI01 absolute maximum ratings: (1) Storage Temperature, Plastic Packages: -65°C to +150°C; (2) Ambient Temperature with Power Applied: -65°C to +125°C; (3) Voltage with Respect to Ground, Vcc: -0.5 V to +4.0 V, VIO: -0.5 V to +4.0 V, A9, OE#, ACC and RESET#: -0.5 V to +12.5 V, All other pins: -0.5 V to +12.5V; (4) Output Short Circuit Current: 200mA.
Features
S29GL256N10TFI01 features: (1) Single power supply operation; (2) Enhanced VersatileI/O control; (3) Manufactured on 110 nm MirrorBit process technology; (4) Flexible sector architecture; (5) Compatibility with JEDEC standards; (6) 100,000 erase cycles per sector typical; (7) 20-year data retention typical; (8) Low power consumption (typical values at 3.0 V, 5MHz) .
Diagrams
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 S29GL256N10TFI010 |
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Data Sheet |
Negotiable |
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S29GL016A |
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S29GL01GP |
Other |
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Data Sheet |
Negotiable |
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S29GL01GP11FAIR10 |
Spansion |
Flash IC 1GIG 3.0V FLSHMEM |
Data Sheet |
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S29GL01GP11FAIR20 |
Spansion |
Flash 1GB 3.0-3.6V 110ns |
Data Sheet |
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S29GL01GP11FFCR10 |
Spansion |
Flash 1GB 3.0-3.6V 110ns PBF |
Data Sheet |
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S29GL01GP11FFCR20 |
Spansion |
Flash 1GB 3.0-3.6V 110ns PBF |
Data Sheet |
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