Product Summary
The S29GL512N11TFI01 is a 3.0V single power flash memory manufactured using 110nm MirrorBit technology. The S29GL512N11TFI01 requires only a single 3.0 volt power supply for both read and write functions. The S29GL512N11TFI01 reduces power consumption in the standby mode when it detects specific voltage levels on CE# and RESET#, or when addresses have been stable for a specified period of time.
Parametrics
S29GL512N11TFI01 absolute maximum ratings: (1) Storage Temperature, Plastic Packages: -65°C to +150°C; (2) Ambient Temperature with Power Applied: -65°C to +150°C; (3) Voltage with Respect to Ground, VCC: -0.5 to +4.0V, VIO: -0.5 to +4.0V, A9, OE#, and ACC: -0.5 V to +12.5 V; (4) All other pins: -0.5 V to VCC+ 0.5V; (5) Output Short Circuit Current: 200mA.
Features
S29GL512N11TFI01 features: (1) Single power supply operation; (2) Manufactured on 110 nm MirrorBit process
technology; (3) Secured Silicon Sector region; (4) Flexible sector architecture; (5) Compatibility with JEDEC standards; (6) 100,000 erase cycles per sector typical; (7) 20-year data retention typical.
Diagrams
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![]() S29GL512N11TFI01 |
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![]() S29GL01GP |
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![]() S29GL01GP11FAIR10 |
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![]() Flash IC 1GIG 3.0V FLSHMEM |
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![]() S29GL01GP11FAIR20 |
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![]() Flash 1GB 3.0-3.6V 110ns |
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![]() S29GL01GP11FFCR10 |
![]() Spansion |
![]() Flash 1GB 3.0-3.6V 110ns PBF |
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![]() S29GL01GP11FFCR20 |
![]() Spansion |
![]() Flash 1GB 3.0-3.6V 110ns PBF |
![]() Data Sheet |
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