SN74AUP1G06DBVR

SN74AUP1G06DBVR, low-power single inverter buffer/driver, SOT, -0.5 to 4.6 V, ±20 mA, Texas Instruments

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Price:: US $2.00~2.50 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 300 :	2.50 / Piece
301 ~ 600 :	2.30 / Piece
601 ~ 1000 :	2.00 / Piece

PartNumber:: SN74AUP1G06DBVR

Brand:: Texas Instruments - TI | Pack: SOT | D/C: 11+

Availability:: Supply Ability: 1000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-04-11

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Part Number:SN74AUP1G06DBVR
US $2.00 - 2.50
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Product Summary

The SN74AUP1G06DBVR is a low-power single inverter buffer/driver.

Parametrics

SN74AUP1G06DBVR absolute maximum ratings: (1)VCC, Supply voltage range: -0.5 to 4.6 V; (2)VI, Input voltage range: -0.5 to 4.6 V; (3)VO, Voltage range applied to any output in the high-impedance or power-off state: -0.5 to 4.6 V; (4)VO, Output voltage range in the high or low state: -0.5 to VCC + 0.5 V; (5)IIK, Input clamp current VI< 0: -50 mA; (6)IOK, Output clamp current V O < 0: -50 mA; (7)IO, Continuous output current: ±20 mA; (8)Continuous current through V CC or GND: ±50 mA; (9)θ JA Package thermal impedance, DBV package 206℃/W; DCK package: 252℃/W; YEP/YZP package: 132℃/W; (10)Tstg, Storage temperature range: -65 to 150℃.

Features

SN74AUP1G06DBVR features: (1)Available in the Texas Instruments NanoStar and NanoFree Packages; (2)Low Static-Power Consumption(ICC = 0.9μA Max); (3)Low Dynamic-Power Consumption(C pd = 1 pF Typ at 3.3 V); (4)Low Input Capacitance (Ci= 1.5 pF Typ); (5)Low Noise-Overshoot and Undershoot<10% of VCC; (6)Ioff Supports Partial Power-Down-Mode Operation; (7)Input Hysteresis Allows Slow Input Transitio and Better Switching Noise Immunity at the Input (V hys = 250 mV Typ at 3.3 V); (8)Wide Operating V CC Range of 0.8 V to 3.6 V; (9)Optimized for 3.3-V Operation; (10)3.6-V I/O Tolerant to Support Mixed-Mode; (11)Signal Operation; (12)t pd = 3.6 ns Max at 3.3 V; (13)Suitable for Point-to-Point Applications; (14)Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II; (15)ESD Performance Tested Per JESD 22, 2000-V Human-Body Model; (16)(A114-B, Class II); 200-V Machine Model (A115-A); 1000-V Charged-Device Model (C101); (17)ESD Protection Exceeds ± 5000 V With Human-Body Model.