SST39VF3201-70-4C-EKE

Product Summary

The SST39VF3201-70-4C-EKE is a 1M x16 CMOS Multi-Purpose Flash Plu (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF3201-70-4C-EKE writes (Program or Erase) with a 2.7-3.6V power supply. The SST39VF3201-70-4C-EKE conform to JEDEC standard pinouts for x16 memories. Featuring high performance Word-Program, the SST39VF3201-70-4C-EKE provide a typical Word-Program time of 7 μsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years.

Parametrics

SST39VF3201-70-4C-EKE absolute maximum ratings: (1)Temperature Under Bias: -55℃ to +125℃; (2)Storage Temperature: -65℃ to +150℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD+0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -2.0V to VDD+2.0V; (5)Voltage on A9 Pin to Ground Potential: -0.5V to 13.2V; (6)Package Power Dissipation Capability (Ta = 25℃): 1.0W; (7)Surface Mount Lead Soldering Temperature (3 Seconds): 240℃; (8)Output Short Circuit Current: 50 mA.

Features

SST39VF3201-70-4C-EKE features: (1)Single Voltage Read and Write Operations: 2.7-3.6V; (2)Superior Reliability; (3)Low Power Consumption (typical values at 5 MHz); (4)Hardware Block-Protection/WP# Input Pin; (5)Sector-Erase Capability: Uniform 2 KWord sectors; (6)Block-Erase Capability: Uniform 32 KWord blocks; (7)Chip-Erase Capability; (8)Erase-Suspend/Erase-Resume Capabilities; (9)Hardware Reset Pin (RST#); (10)Latched Address and Data; (11)Fast Erase and Word-Program; (12)Automatic Write Timing: Internal VPP Generation; (13)End-of-Write Detection.

Diagrams