Product Summary

The TC110G08AT-0404 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold thin-film metallization for proven high MTTF. The transistor includes input returns for improved output rise time . Low thermal resistance package reduces junction temperature which extends the life time of the product.




Parametrics

TC110G08AT-0404 absolute maximum ratings: (1)device dissipation1 @25°c (pd): 3400 w; (2)thermal resistance1 (θjc): .08°c/w; (3)collector-base voltage: 65v; (4)emitter-base voltage: 3.5v; (5)collector current: 80a; (6)storage temperature: -40 to +150°c; (7)operating junction temperature1: +200°c.

Features

TC110G08AT-0404 features: (1)emitter-base breakdown(open)ie=50ma: 3.5 v; (2)collector-emitter breakdown(shorted)ic=30ma: 65 v; (3)collector-emitter breakdown (open)ic=30ma: 30 v; (4)dc current gain ic=5a, vce=5v: 20 to 100 β.

Diagrams

TC110G08AT-0404 pin connection