(China (Mainland))
Product Summary
The TC58NVG1S3ETAOO is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks. The TC58NVG1S3ETAOO has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
Parametrics
TC58NVG1S3ETAOO absolute maximum ratings: (1)VCC, Power Supply Voltage: -0.6 to 4.6 V; (2)VIN, Input Voltage: -0.6 to 4.6 V; (3)VI/O, Input /Output Voltage: -0.6 to VCC + 0.3 (≤ 4.6 V) V; (4)PD, Power Dissipation: 0.3 W; (5)TSOLDER, Soldering Temperature (10 s): 260℃; (6)TSTG, Storage Temperature: -55 to 150℃; (7)TOPR, Operating Temperature: 0 to 70℃.
Features
TC58NVG1S3ETAOO features: (1)Modes, Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read; (2)Mode control, Serial input/output; Command control; (3)Number of valid blocks, Min 2008 blocks; Max 2048 blocks; (4)Power supply, VCC = 2.7V to 3.6V; (5)Access time, Cell array to register 25μs max; Serial Read Cycle 25 ns min (CL=100pF).
Diagrams
