(China (Mainland))
Product Summary
The TH58NVG5S2FTA20 is a single 3.3V 32 Gbit (36,305,895,424 bits) NAND electrically erasable and programmable read-only memory. The TH58NVG5S2FTA20 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
Parametrics
TH58NVG5S2FTA20 absolute maximum ratings: (1)Power Supply Voltage: -0.6 to 4.6 V; (2)Input Voltage: -0.6 to 4.6 V; (3)Input /Output Voltage: -0.6 to VCC + 0.3 (≤ 4.6 V) V; (4)Power Dissipation: 0.3 W; (5)Soldering Temperature (10 s): 260 °C; (6)Storage Temperature: -55 to 150 °C; (7)Operating Temperature: 0 to 70 °C.
Features
TH58NVG5S2FTA20 features: (1)memory cell array 4328 × 256k × 8 × 4; (2)register 4328 × 8; (3)page size 4328 bytes; (4)block size (256K + 14.5K) bytes; (5)modes: read, reset, auto page program, auto block erase, status read, page copy, multi page program, multi block erase, multi page copy, multi page read; (6)mode control: serial input/output, command control; (7)power supply: Vcc = 2.7V to 3.6V; (8)access time: cell array to register 30 us max, serial read cycle 25 ns min (CL=100pF); (9)program/erase time: auto page program 300 μs/page typ., auto block erase 3 ms/block typ.
Diagrams
