Product Summary

The XR20M11721G28-F is a high-speed synchronous dynamic random access memory (SDRAM), organized as 512K words × 2 banks × 16 bits. XR20M11721G28-F delivers a data bandwidth of up to 200M words per second. For different application, XR20M11721G28-F is sorted into the following speed grades: -5/-6/-6I/-6A/-7 and -7I. The -5 parts can run up to 200MHz/CL3 or 143MHz/CL2. The -6/-6I/-6A parts can run up to 166MHz/CL3 (the -6I industrial grade, -6A automotive grade which is guaranteed to support -40℃ ~ 85℃).

Parametrics

XR20M11721G28-F absolute maximum ratings: (1)Input, Output Voltage VIN, VOUT: -1 ~ VCC + 0.3 V; (2)Power Supply Voltage VCC, VCCQ: -1~ 4.6 V; (3)Operating Temperature for -5/-6/-7 TOPR: 0 ~ 70 ℃; (4)Operating Temperature for -6I/-6A/-7I TOPR: -40 ~ 85 ℃; (5)Storage Temperature TSTG: -55 ~ 150 ℃; (6)Soldering Temperature (10s) TSOLDER: 260 ℃; (7)Power Dissipation PD: 1 W; (8)Short Circuit Output Current IOUT: 50 mA.

Features

XR20M11721G28-F features: (1)3.3V±0.3V power supply for -5/-6/-6I/-6A speed grades 2.7V~3.6V power supply for -7/-7I speed grades; (2)524,288 words x 2 banks x 16 bits organization; (3)Self Refresh current: standard and low power; (4)CAS Latency: 2 and 3; (5)Burst Length: 1, 2, 4, 8 and Full Page; (6)Burst Read, Single Writes Mode; (7)Byte Data Controlled by LDQM, UDQM; (8)Auto-precharge and Controlled Precharge; (9)4K Refresh Cycles/64 mS; (10)Interface: LVTTL; (11)Packaged in 50-pin, 400 mil TSOP II, using Lead free materials with RoHS compliant.

Diagrams

XR20M11721G28-F block diagram

XR20M1170
XR20M1170

Other


Data Sheet

Negotiable 
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Data Sheet

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Data Sheet

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Data Sheet

0-1: $2.66
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25-100: $2.02
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