Product Summary

The ATF-36077-TR1 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB. Additionally, the ATF-36077-TR1 has very low noise resistance, reducing the sensitivity of noise performance to variations in input impedance match, making the design of broadband low noise amplifiers much easier. The applications of the include 12 GHz DBS LNB (Low Noise Block), 4 GHz TVRO LNB (Low Noise Block), Ultra-Sensitive Low Noise Amplifiers.

Parametrics

ATF-36077-TR1 absolute maximum ratings: (1)VDS, Drain-Source Voltage: +3V; (2)VGS, Gate-Source Voltage: -3V; (3)VGD, Gate-Drain Voltage: -3.5V; (4)ID, Drain Current: IdssmA; (5)PT, Total Power Dissipation: 180mW; (6)Pin max, RF Input Power: +10dBm; (7)Tch, Channel Temperature: 150℃; (8)TSTG, Storage Temperature: -65 to 150℃.

Features

ATF-36077-TR1 features: (1)PHEMT Technology; (2)Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz; 0.3 dB Typical at 4 GHz; (3)High Associated Gain: 12 dB Typical at 12 GHz; 17 dB Typical at 4 GHz; (4)Low Parasitic Ceramic Microstrip Package; (5)Tape-and-Reel Packing Option Available.

Diagrams

ATF-36077-TR1 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
ATF-36077-TR1
ATF-36077-TR1
Avago Technologies
Transistors RF GaAs Transistor GaAs High Frequency
Data Sheet
0-610: $2.53
610-1000: $2.37
1000-2000: $2.22
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