Product Summary
The BAS29 is a Small Signal Diode.
Parametrics
BAS29 absolute maximum ratings: (1)VRRM, Maximum Repetitive Reverse Voltage: 120 V; (2)IF(AV), Average Rectified Forward Current: 200 mA; (3)IFSM, Non-repetitive Peak Forward Surge Current, Pulse Width = 1.0 second: 1.0A; Pulse Width = 1.0 microsecond: 2.0A; (4)Tstg, Storage Temperature Range -55 to +150℃; (5)TJ, Operating Junction Temperature 150℃.
Features
BAS29 features: (1)VR, Breakdown Voltage IR = 1.0 mA: 120 V; (2)VF, Forward Voltage IF = 10 mA: 0.75V; IF = 50 mA: 0.84V; IF = 100 mA: 0.90V; IF = 200 mA: 1.00V; IF = 400 mA: 1.25V; (3)IR, Reverse Current VR = 90 V: 100nA; VR = 90 V, TA = 150℃: 100μA; (4)CT, Total Capacitance VR = 0, f = 1.0 MHz: 2.0 pF; (5)trr, Reverse Recovery Time IF = IR = 30 mA, IRR = 3.0 mA, RL = 100 Ω: 50 ns.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BAS29 |
Fairchild Semiconductor |
Rectifiers 120V 200mA |
Data Sheet |
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BAS29 T/R |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) DIODE SW TAPE-7 |
Data Sheet |
Negotiable |
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BAS29_D87Z |
Fairchild Semiconductor |
Rectifiers Gen Purpose Diode High Voltage |
Data Sheet |
Negotiable |
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BAS29_Q |
Fairchild Semiconductor |
Rectifiers 120V 200mA |
Data Sheet |
Negotiable |
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BAS29_S00Z |
Fairchild Semiconductor |
Rectifiers Gen Purpose Diode High Voltage |
Data Sheet |
Negotiable |
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BAS29,215 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) DIODE SW TAPE-7 |
Data Sheet |
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