Product Summary

The CY14B104-ZS45XC is a 4-Mbit (512 K x 8/256 K x 16) nvSRAM. The CY14B104-ZS45XC combines a 4-Mbit nonvolatile static RAM (nvSRAM) with a full-featured RTC in a monolithic integrated circuit. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM is read and written infinite number of times, while independent nonvolatile data resides in the nonvolatile elements.

Parametrics

CY14B104-ZS45XC absolute maximum ratings: (1)Storage temperature:–65 °C to +150°C; (2)Ambient temperature with power applied:–55°C to +150°C; (3)Voltage applied to outputs in High Z state:–0.5 V to VCC + 0.5 V; (4)Input voltage:–0.5 V to VCC + 0.5 V; (5)Transient voltage (<20 ns) on any pin to ground potential:–2.0 V to VCC + 2.0 V; (6)Package power dissipation capability (TA = 25°C): 1.0 W; (7)Surface mount Pb soldering temperature (3 Seconds): +260°C.

Features

CY14B104-ZS45XC features: (1)25 ns and 45 ns access times; (2)Hands off automatic STORE on power-down with only a small capacitor; (3)STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down; (4)RECALL to SRAM is initiated by software or power-up; (5)High reliability; (6)Infinite read, write, and RECALL cycles; (7)1 million STORE cycles to QuantumTrap; (8)20 year data retention; (9)Single 3-V +20%, –10% operation; (10)Data integrity of Cypress nvSRAM combined with full-featured real time clock (RTC); (11)Watchdog timer; (12)Clock alarm with programmable interrupts; (13)Capacitor or battery backup for RTC; (14)Industrial temperature; (15)44-pin and 54-pin thin small outline package (TSOP II); (16)Pb-free and restriction of hazardous substances (RoHS) compliant.

Diagrams

CY14B104-ZS45XC pin connection