Product Summary
The CY62146EV30LL-45ZSXI is a high performance CMOS static RAM organized as 256K words by 16 bits. The CY62146EV30LL-45ZSXI features advanced circuit design to provide ultra low active current. The CY62146EV30LL-45ZSXI also has an automatic power down feature that significantly educes power consumption by 80% when addresses are not toggling.
Parametrics
CY62146EV30LL-45ZSXI absolute maximum ratings: (1) Storage Temperature: -65°C to +150°C; (2) Ambient Temperature with Power Applied: -55°C to +125°C; (3) Supply Voltage to Ground Potential: -0.3V to + 3.9V ( Vccmax + 0.3V) ; (4) DC Voltage Applied to Outputs n High-Z State: -0.3V to 3.9V (Vccmax +0.3V) ; (5) DC Input Voltage: -0.3V to 3.9V (Vccmax +0.3V) ; (6) Output Current into Outputs (LOW) :20mA; (7) Static Discharge Voltage: >2001V; (8) Latch-up Current: >200mA.
Features
CY62146EV30LL-45ZSXI features: (1) very high speed: 45ns; (2) Wide voltage range: 2.20V-3.60V; (3) Pin compatible with CY62146DV30; (4) Ultra low standby power; (5) Easy memory expansion with CE, and OE features; (6) Automatic power down when deselected; (7) CMOS for optimum speed and power; (8) Available in a Pb-free 48-ball VFBGA and 44-pin TSOP II packages.
Diagrams
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Image | Part No | Mfg | Description | Pricing (USD) |
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CY62146EV30LL-45ZSXI |
Cypress Semiconductor |
SRAM 4M Ultra LO Pwr HI SPD Micropwr IND |
Data Sheet |
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CY62146EV30LL-45ZSXIT |
Cypress Semiconductor |
SRAM 4M Ultra LO Pwr HI SPD Micropwr IND |
Data Sheet |
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