Product Summary

The FCA20N60 is an N-Channel MOSFET. SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology of the FCA20N60 has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

Parametrics

FCA20N60 absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 600 V; (2)ID, Drain Current - Continuous (TC = 25℃): 20A; -Continuous (TC = 100℃): 12.5A; (3)IDM, Drain Current - Pulsed (Note 1): 60 A; (4)VGSS, Gate-Source voltage: ±30 V; (5)EAS, Single Pulsed Avalanche Energy: 690 mJ; (6)IAR, Avalanche Current: 20 A; (7)EAR, Repetitive Avalanche Energy: 20.8 mJ; (8)dv/dt, Peak Diode Recovery dv/dt: 4.5 V/ns; (9)PD, Power Dissipation (TC = 25℃): 208W; -Derate above 25℃: 1.67W/℃; (10)TJ, TSTG, Operating and Storage Temperature Range: -55 to +150℃; (11)TL, Maximum Lead Temperature for Soldering Purpose,; (12)1/8” from Case for 5 Seconds: 300℃.

Features

FCA20N60 features: (1)650V @TJ = 150℃; (2)Typ. RDS(on) = 0.15Ω Ultra low gate charge (typ. Qg = 75nC); (3)Low effective output capacitance (typ. Coss.eff = 165pF); (4)100% avalanche tested.

Diagrams

FCA20N60 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FCA20N60F
FCA20N60F
Fairchild Semiconductor
MOSFET 600V N-CH FRFET
Data Sheet
0-1: $3.86
1-25: $3.44
25-100: $2.83
100-250: $2.29
FCA20N60FS
FCA20N60FS

MOSFET N-CH 600V 20A TO-3PN
Data Sheet
0-450: $2.65
FCA20N60S_F109
FCA20N60S_F109
Fairchild Semiconductor
MOSFET 650V, SUPER FET
Data Sheet
0-220: $2.93
220-250: $2.64
250-500: $2.37
500-1000: $2.00
FCA20N60_F109
FCA20N60_F109
Fairchild Semiconductor
MOSFET 600V N-CH MOSFET
Data Sheet
0-245: $2.83
245-250: $2.60
250-500: $2.37
500-1000: $2.06
FCA20N60
FCA20N60
Fairchild Semiconductor
MOSFET HIGH_POWER
Data Sheet
Negotiable