Product Summary
The FDD8444 is an N-Channel PowerTrench MOSFET. The applications of the FDD8444 include Automotive Engine Control, Powertrain Management, Solenoid and Motor Drivers, Electronic Transmission, Distributed Power Architecture and VRMs, Primary Switch for 12V Systems.
Parametrics
FDD8444 absolute maximum ratings: (1)VDSS Drain to Source Voltage: 40 V; (2)VGS Gate to Source Voltage: ±20 V; (3)ID, Drain Current Continuous (VGS=10v): 155 A; (4)Continuous (VGS=10v,with RθJA = 52℃/W): 17.5 A; Pulsed: Figure 4; (5)EAS, Single Pulse Avalanche Energy: 535 mJ; (6)PD, Power Dissipation: 227 W; Derate above 25℃: 1.52 W/℃; (7)TJ, TSTG, Operating and Storage Temperature: -55 to +175℃.
Features
FDD8444 features: (1)RDS(ON) = 4mΩ (Typ), VGS = 10V, ID=50A; (2)Qg(10) = 89nC (Typ), VGS=10V; (3)Low Miller Charge; (4)Low Qrr Body Diode; (5)UIS Capability (Single Pulse/Repetitive Pulse); (6)Qualified to AEC Q101; (7)RoHS Compliant.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FDD8444 |
Fairchild Semiconductor |
MOSFET LOW_VOLTAGE |
Data Sheet |
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FDD8444_F085 |
Fairchild Semiconductor |
MOSFET LOW_VOLTAGE |
Data Sheet |
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FDD8444L_F085 |
Fairchild Semiconductor |
MOSFET 40V N-Channel PowerTrench |
Data Sheet |
Negotiable |
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FDD8444L |
Fairchild Semiconductor |
MOSFET 40V N-Ch POWERTRENCH MOSFET |
Data Sheet |
Negotiable |
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