Product Summary

The M29W400DB is a 4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W400DB is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

Parametrics

M29W400DB absolute maximum ratings: (1)Temperature under bias: -50 to 125 ℃; (2)Storage temperature: -65 to 150 ℃; (3)Input or output voltage: -0.6 to VCC+0.6 V; (4)Supply voltage: -0.6 to 4 V; (5)Identification voltage: -0.6 to 13.5 V.

Features

M29W400DB features: (1)Supply voltage: VCC = 2.7 V to 3.6 V for Program, Erase and Read; (2)Access time: 45, 55, 70 ns; (3)Programming time: 10 μs per byte/word typical; (4)11 memory blocks: 1 boot block (top or bottom location), 2 parameter and 8 main blocks; (5)Program/Erase controller: Embedded byte/word program algorithms; (6)Erase Suspend and Resume modes: Read and Program another block during Erase Suspend.

Diagrams

M29W400DB logic diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
M29W400DB45N6E
M29W400DB45N6E

STMicroelectronics

Flash 4 Mbit (3 V)

Data Sheet

Negotiable 
M29W400DB45ZE6E
M29W400DB45ZE6E

STMicroelectronics

Flash 4 MBIT 3V SUPPLY

Data Sheet

Negotiable 
M29W400DB55N6E
M29W400DB55N6E

STMicroelectronics

Flash STD FLASH

Data Sheet

Negotiable 
M29W400DB55N1
M29W400DB55N1

STMicroelectronics

Flash 512Kx8 or 256Kx16 55

Data Sheet

Negotiable 
M29W400DB55N6
M29W400DB55N6

STMicroelectronics

Flash 512Kx8 or 256Kx16 55

Data Sheet

Negotiable 
M29W400DB55N3T
M29W400DB55N3T


IC FLASH 4MBIT 55NS 48TSOP

Data Sheet

Negotiable 
M29W400DB55ZE6F
M29W400DB55ZE6F

STMicroelectronics

Flash 4 Mbit (512 ) 3 V

Data Sheet

Negotiable 
M29W400DB55ZE6E
M29W400DB55ZE6E

STMicroelectronics

Flash 4 MBIT 3V SUPPLY

Data Sheet

Negotiable