(China (Mainland))
Product Summary
The HY27SF081G2A-FPIB is a 128Mx8bit NAND Flash. The device is offered in 1.8V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The HY27SF081G2A-FPIB is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The HY27SF081G2A-FPIB contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.
Parametrics
HY27SF081G2A-FPIB absolute maximum ratings: (1)Ambient Operating Temperature (Temperature Range Option 1): 0 to 70 ℃; (2)Ambient Operating Temperature (Industrial Temperature Range): -40 to 85 ℃; (3)Temperature Under Bias: -50 to 125 ℃; (4)Storage Temperature: -65 to 150 ℃; (5)Input or Output Voltage: -0.6 to 4.6V; (6)Supply Voltage: -0.6 to 4.6V.
Features
HY27SF081G2A-FPIB features: (1)high density nand flash memories: Cost effective solutions for mass storage applications; (2)nand interface: x8 or x16 bus width, Multiplexed Address/ Data, Pinout compatibility for all densities ; (3)supply voltage: VCC = 1.7 to 1.95V; (4)Memory Cell Array: (2K+64) Bytes x 64 Pages x 1,024 Blocks, (1K+32) Words x 64 Pages x 1,024 Blocks; (5)Random access: 25us (max.); (6)Sequential access: 50ns (min.); (7)Page program time: 200us (typ.).
Diagrams
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