(China (Mainland))
Product Summary
The HY27UF082G2B-FPCB is a 2Gb NAND Flash Memory. The device is offered in 3.3V Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The HY27UF082G2B-FPCB contains 2048 blocks, composed by 64 pages. A program operation allows to write the 2112-byte page in typical 200us and an erase operation can be performed in typical 1.5ms on a 128K-byte block. Even the write-intensive systems can take advantage of the HY27UF(08/16)2G2B Series extended reliability of 100K program/erase cycles by supporting ECC (Error Correcting Code) with real time mapping-out algorithm.
Parametrics
HY27UF082G2B-FPCB absolute maximum ratings: (1)Ambient Operating Temperature (Commercial Temperature Range): 0 to 70 ℃; (2)Ambient Operating Temperature (Industrial Temperature Range): -40 to 85 ℃; (3)Temperature Under Bias: -50 to 125 ℃; (4)Storage Temperature: -65 to 150 ℃; (5)Input or Output Voltage: -0.6 to 4.6 V; (6)Supply Voltage: -0.6 to 4.6 V; (7)Lead Temperature (Soldering, 10 sec): 300°C.
Features
HY27UF082G2B-FPCB features: (1)high density nand flash memories: cost effective solutions for mass storage applications; (2)x8 or x16 bus width.; (3)Multiplexed Address/ Data; (4)Pinout compatibility for all densities; (5)copy back program mode - fast page copy without external buffering; (6)fast block erase - block erase time: 2ms (typ.); (7)status register; (8)electronic signature - 1st cycle: manufacturer code, 2nd cycle: device code; (9)chip enable do not care - simple interface with microcontroller; (10)automatic page 0 read at power-up option: boot from nand support, automatic memory download; (11)hardware data protection - program/erase locked during power transitions.
Diagrams
