Product Summary
The HY27US08561M-TPCB is a 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The HY27US08561M-TPCB contains 2048 blocks, composed by 32 pages consisting in two NAND structures of 16 series connected Flash cells. This device includes also extra features like OTP/Unique ID area, Block Lock mechanism, Automatic Read at Power Up, Read ID2 extension.
Parametrics
HY27US08561M-TPCB absolute maximum ratings: (1)Ambient Operating Temperature (Commercial Temperature Range): 0 to 70 ℃; (2)Ambient Operating Temperature (Extended Temperature Range): -25 to 85 ℃; (3)Ambient Operating Temperature (Industrial Temperature Range): -40 to 85 ℃; (4)Temperature Under Bias: -50 to 125 ℃; (5)Storage Temperature: -65 to 150 ℃; (6)Input or Output Voltage: -0.6 to 4.6 V; (7)Supply Voltage: -0.6 to 4.6 V.
Features
HY27US08561M-TPCB features: (1)high density nand flash memories: cost effective solutions for mass storage applications; (2)x8 or x16 bus width.; (3)Multiplexed Address/ Data; (4)Pinout compatibility for all densities; (5)copy back program mode - fast page copy without external buffering; (6)fast block erase - block erase time: 2ms (typ.); (7)status register; (8)electronic signature - 1st cycle: manufacturer code, 2nd cycle: device code; (9)chip enable do not care - simple interface with microcontroller; (10)automatic page 0 read at power-up option: boot from nand support, automatic memory download; (11)hardware data protection - program/erase locked during power transitions
Diagrams
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HY27US08561M-TPCB |
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