(China (Mainland))
Product Summary
The JS28F512M29EWL is an asynchronous, uniform block, parallel NOR Flash memory device manufactured on 65nm multilevel cell (MLC) technology. The JS28F512M29EWL supports asynchronous random read and page read from all blocks of the array. The JS28F512M29EWL also features an internal program buffer that improves throughput by programming 512 words via one command sequence.
Parametrics
JS28F512M29EWL absolute maximum ratings: (1) Temperature under bias TBIAS: -50 to 125°C; (2) Storage temperature TSTG: -65 to 150°C; (3) Input/output voltage VIO: -0.6 to Vcc +0.6V; (4) Supply voltage Vcc: -0.6 to 4V; (5) Input/output supply voltage VCCQ: -0.6 to 4V; (6) Program voltage VPPH: -0.6 to 14.5V.
Features
JS28F512M29EWL features: (1) 2Gb = stacked device (two 1Gb die) ; (2) Asynchronous random/page read; (3) Buffer program: 512-word program buffer; (4) BLANK CHECK operation to verify an erased block; (5) Extended memory block; (6) Low power consumption: Standby mode; (7) 65nm multilevel cell (MLC) process technology; (8) Green packages available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
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 JS28F512M29EWL0 |
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IC FLASH 512MBIT 110NS 56TSOP |
Data Sheet |
Negotiable |
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JS28F512M29EWLA |
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IC FLASH 512MBIT M29EW 56TSOP |
Data Sheet |
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